Partially isolated amplifying gate thyristor with controllable d

Details Partially isolated amplifying gate thyristor with controllable d Partially isolated amplifying gate thyristor with controllable d

Filed on

1980-05-23

Date issued

1981-04-07

Examiner

Clawson, Jr., Joseph E.

Other Related Categories

357 51, 357 55, 357 86, H01L 2974

Type

Patent

Status

active

Patent number

042610010

Description

ABSTRACT:
A semiconductor device used for high voltage applications is disclosed. The disclosed semiconductor device is an amplifying gate thyristor having a gate region, a pilot thyristor, a main thyristor and a compensation region. The compensation region in conjunction with a circuit arrangement and contact regions disposed on the amplifying gate thyristor, supplies a bias voltage developed by dv/dt currents flowing within the compensation region that is of equal potential to a voltage developed within the gate region by the dv/dt currents flowing within the gate region. The circuit arrangement, in conjunction with the contact regions, improves the dv/dt capability of the pilot thyristor without causing subsequent degradation of the dv/dt capability of the main thyristor. The circuit may be further arranged to provide an improvement to the dv/dt capability of the main thyristor. Similarly, the contact regions may be further arranged to provide an improvement to the di/dt capability of the pilot thyristor of the device. The various disclosed embodiments also provide for further improvements to the gate sensitivity of the amplifying gate thyristor.

REFERENCES:
patent: 3794890 (1974-02-01), Weimann et al.
patent: 3967294 (1976-06-01), Takase et al.
patent: 4110638 (1978-08-01), Voss
patent: 4208669 (1980-06-01), Silber et al.
Silber et al., "Improved Gate Concept for Light Activated Power Thyristors," IEEE Int'l. Dev. Meeting, 1975, #16.4, pp. 371-374.

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