High voltage semiconductor device having an improved dv/dt capab

Details High voltage semiconductor device having an improved dv/dt capab High voltage semiconductor device having an improved dv/dt capab

1980-05-23

1981-04-07

Clawson, Jr., Joseph E.

357 55, 357 86, H01L 2974

Patent

active

042610001

ABSTRACT:
A semiconductor device used for high voltage applications exhibits reduced susceptibility to being inadvertently turned-on by capacitive charging currents generated by relatively high voltage transients impressed across an anode and a cathode of the device. The capacitive charging currents are manifested as a gate current which in a thyristor renders the device conductive if it exceeds a critical value and in a transistor is multiplied by the current gain. A conductive ring and adjacent groove are employed on the surface of the device, along with certain interconnections, to maintain the level of the transient-produced gate current at a value below the critical value.

REFERENCES:
patent: 3794890 (1974-02-01), Weimann et al.
patent: 3967294 (1976-06-01), Takase et al.
patent: 4110638 (1978-08-01), Voss
patent: 4208669 (1980-06-01), Silber et al.
Silber et al., "Improved Gate Concept for Urgent Activated Power Thyristors," IEEE Int'l Dev. Meeting, 1975, #16.4, pp. 371-374.

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