Polishing compositions for semiconductor substrates

Abrasive tool making process – material – or composition – With inorganic material – Metal or metal oxide

Reexamination Certificate

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Details

C051S307000, C051S308000, C106S003000, C438S692000, C438S693000

Reexamination Certificate

active

06379406

ABSTRACT:

The present invention relates to high purity abrasive particles comprising metal oxide for use in chemical-mechanical polishing compositions (or slurries). Polishing compositions or slurries used for chemical mechanical polishing (CMP) typically comprise an aqueous solution which contains abrasive particles, an oxidizing agent, a dispersant and/or a complexing agent. The abrasive particles are typically sub-micron in size.
U.S. Pat. No. 4,959,113 discloses an aqueous polishing composition containing alumina particles and aluminum nitrate that is added to the aqueous polishing composition to improve the polishing efficiency of the alumina particles.
This invention provides an aqueous polishing composition for polishing semiconductor substrates comprising submicron particles of a metal oxide and a soluble metal salt of the metal oxide. The soluble metal salt is present in a proportionate amount to adjust the aqueous concentration of metal ions to the equilibrium solubility of the metal oxide at the desired pH of the polishing composition thus providing an aqueous polishing composition having a stable pH.


REFERENCES:
patent: 4956015 (1990-09-01), Okajima et al.
patent: 4959113 (1990-09-01), Roberts
patent: 5366542 (1994-11-01), Yamada et al.
patent: 5868604 (1999-02-01), Atsugi et al.
patent: 6241586 (2001-06-01), Yancey
patent: 6258140 (2001-07-01), Shemo et al.
Kaufman et al.; “Chemical-Mechanical Polishing for Fabricating Patterned W Metal Features as Chip Interconnects”; Journal of the Electrochemical Society; Nov., 1991; pp. 3460-3464; vol. 138. No. 11; The Electrochemical Society, Inc.

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