Power semiconductor device with temperature sensor

Details Power semiconductor device with temperature sensor Power semiconductor device with temperature sensor

1992-11-03

1995-02-14

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Temperature

257341, 257470, 257551, H01L 2358

Patent

active

053898133

ABSTRACT:
This invention relates to a power semiconductor device with a temperature sensor (32). The power semiconductor device (36), such as a power transistor, comprises a plurality of power device cells (108). The temperature sensor comprises a temperature sensing diode (34) implemented in at least one of the power device cell (108) such that the power device cell and sensing diode have a common conduction region (102), whereby the temperature sensor can directly sense the temperature of the power device cell.

REFERENCES:
patent: 3936863 (1976-02-01), Olmstead
patent: 4028564 (1977-06-01), Streit et al.
patent: 4903106 (1990-02-01), Fukunaga et al.
patent: 5049961 (1991-09-01), Zommer
patent: 5070322 (1991-12-01), Fujihira

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