Semiconductor light emitting element and method for fabricating

Details Semiconductor light emitting element and method for fabricating Semiconductor light emitting element and method for fabricating

1996-01-19

1998-07-28

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 319

Patent

active

057871043

ABSTRACT:
The semiconductor laser of this invention includes an active layer formed in a c-axis direction, wherein the active layer is made of a hexagonal-system compound semiconductor, and anisotropic strain is generated in a c plane of the active layer.

REFERENCES:
patent: 5079774 (1992-01-01), Mendez et al.
patent: 5381260 (1995-01-01), Ballato et al.
Nido, "Effect of Biaxial Strain on Cubic and Hexagonal GaN Analyzed by Tight-Binding Method", Jpn. J. Appl. Phys. vol. 34, Part 2, 11B, pp. 1513-1516, Nov. 15, 1995.
H. Amano et al., "Heteroepitaxial Growth and the Effect of Strain on the Luminescent Properties of GaN Films on (1120) and (0001) Sapphire Substrates", Japanese Journal of Applied Physics, vol. 27, No. 8, Aug., 1988, L1384-L1386.
"InGaN/AlGaN blue-light-emitting diodes," S. Nakamura, J. Vac. Sci. Technol. A, vol. 13, No. 3, pp. 705-710, (1995) (May/Jun.).

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