Field effect transistor

Details Field effect transistor Field effect transistor

1993-08-24

1995-02-14

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257281, H01L 3300

Patent

active

053898079

ABSTRACT:
It is an object of the present invention to provide a dual-gate type MESFET having a high drain breakdown voltage and excellent high-frequency characteristics. A semiconductor substrate used in the present invention is obtained by sequentially forming a non-doped buffer layer 2, a thin first pulse-doped layer 3 having a high impurity concentration, and a cap layer 7 on an underlying semiconductor substrate 1 by epitaxial growth. The cap layer 7 has a thin second pulse-doped layer 5 having a high impurity concentration sandwiched between non-doped layers 4 and 6. The thickness and impurity concentration of the second pulse-doped layer 5 are set such that the second pulse-doped layer 5 is depleted by a surface depletion layer caused by the interface state of the cap layer surface, and the surface depletion layer does not extend to the first pulse-doped layer 3. A source electrode 13, a drain electrode 16, and first and second gate electrodes 14 and 15 are formed on the semiconductor substrate surface. High-impurity-concentration ion implantation regions 10, 11, and 12 are formed at a source electrode formation region, a drain electrode formation region, and a region between the first and second gate electrode formation regions to extend from the semiconductor substrate surface to the first pulse-doped layer 3. The second electrode 15 formed on the drain electrode 16 side is sufficiently separated from the high-impurity-concentration ion implantation region 12 below the drain electrode 16.

REFERENCES:
Patent Abstracts of Japan, vol. 8, No. 66 (E-234) 28 Mar. 1984 & JP-A-58 215 077 (Nippon Denki K.K.) 14 Dec. 1983.
Patent Abstracts of Japan, vol. 007, No. 182 (E-192) 11 Mar. 1983 & JP-A-58 087 875 (Hitachi Seisakushio KK) 25 May 1983.
Patent Abstracts of Japan, vol. 013, No. 439 (E-827) 3 Oct. 1989 & JP-A-01 116 569 (Hitachi Ltd.) 30 Jun. 1989.
Patent Abstracts of Japan, vol. 8, NO. 44 (E-229) 25 Feb. 1984 & JP-A-58 201 375 (Nippon Denki K.K.) 24 Nov. 1983.
Patent Abstracts of Japan, vol. 6, No. 123 (E-117) (1001) 8 Jul. 1982 & JP-A-57 052 174 (Nippon Denki K.K.) 27 Mar. 1982.
Patent Abstracts of Japan, vol. 014, No. 346 (E-0956) 26 Jul. 1990 & JP-A-02 119 145 (Sony Corp) 7 May 1990.

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