Semiconductor device

Details Semiconductor device Semiconductor device

1994-09-16

1995-06-27

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257335, 257345, 257404, 257902, H01L 2968

Patent

active

054282349

ABSTRACT:
A semiconductor device which comprises a semiconductor substrate having thereon a channel region, said channel region comprising (A) a channel, and (B) a metallic layer or a compound layer of a metal with a constituent material of the semiconductor substrate, provided that at least a part of said metallic layer or said compound layer is included in said channel. The semiconductor device has stable characteristics with high operation speed, and yet, is capable of being fabricated by a simple process.

REFERENCES:
patent: 4631563 (1986-12-01), Iizuka
V. P. Kesan et al., "High Performance 0.25 .mu.m p-MOSFETs with Silicon-Germanium Channels for 300K and 77K Operation", IEEE, 1991, pp. 25-28, Jan. 1991.
G. L. Patton et al., "SIGe-Base Heterojunction Bipolar Transistors: Physics and Design Issues", IEEE, 1990, pp. 13-16.
D. R. Hamann, "New Silicide Inteface Model from Structural Energy Calculations", Physical Revice Letters, vol. 60, No. 4, Jan. 1988, pp. 313-316.

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