Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1994-06-30
1995-06-27
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257233, 257241, 257249, 257250, H01L 2978, H01L 2714, H01L 3100
Patent
active
054282314
ABSTRACT:
A solid-state imaging device comprises a plurality of photoelectric conversion accumulation sections arranged two-dimensionally on a semiconductor substrate, a plurality of vertical CCDs for vertically transferring signal charges read out from the photoelectric conversion accumulation sections, and a horizontal CCD for receiving and horizontally transferring the signal charges transferred by the vertical CCDs. A gap between transfer electrodes of the horizontal CCD is less than a gap between transfer electrodes of the vertical CCDs. The transfer electrodes of the vertical CCDs have a single-layer electrode structure formed by patterning a first polysilicon film. The transfer electrodes of the horizontal CCD have an overlapping double-layer electrode structure comprising alternately arranged electrodes formed by patterning the first polysilicon film and electrodes intervening between the alternately arranged electrodes which are formed by patterning a second polysilicon film. The gap between the electrodes of the horizontal CCD is determined by a silicon oxide film obtained by subjecting the alternately arranged electrodes of the first polysilicon film to thermal oxidation.
REFERENCES:
patent: 4376897 (1983-03-01), Byrne et al.
patent: 4774586 (1988-09-01), Koike et al.
patent: 4998153 (1991-03-01), Kuyk et al.
patent: 5210433 (1993-05-01), Ohsawa et al.
Extended Abstracts of the 22nd (1990 International) Conference on Solid State Devices and Materials, Sendai, 1990, pp. 709-712, 1/2" 600 k-Pixel Interline Transfer CCD Image Sensor with Single Poly-Silicon Electrode Structure.
Matsunaga Yoshiyuki
Nakamura Nobuo
Sasaki Michio
Tanaka Nagataka
Yamashita Hirofumi
Kabushiki Kaisha Toshiba
Ngo Ngan V.
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