Gate turn-off thyristor

Details Gate turn-off thyristor Gate turn-off thyristor

1979-07-16

1981-01-06

Clawson, Jr., Joseph E.

357 36, 357 39, 357 56, 357 90, H01L 2974

Patent

active

042439990

ABSTRACT:
A gate turn-off thyristor which comprises a semiconductor body having at least four contiguous layers, namely, a first layer of a first conductivity type, a second layer lying continguous to the first layer and having a second conductivity type, a third layer lying contiguous to the second layer and having said first conductivity type, and a fourth layer contiguous to the third layer and having said conductivity type;

REFERENCES:
patent: 3609476 (1971-09-01), Storm
J. Shimizu et al., "High-Voltage High Power Gate-Assisted Turn-Off Thyristor for High Frequency Use," IEEE Trans. on Elec. Dev., vol. Ed. 23 #8, Aug. 1976, pp. 883-887.

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