Fishing – trapping – and vermin destroying
Patent
1993-12-27
1995-02-14
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437 40, 437 93, 437 4, 148DIG150, H01L 21469
Patent
active
053895800
ABSTRACT:
A thin film semiconductor device having a silicon thin film semiconductor layer deposited on an ordinary glass substrate at low temperatures of not over 600.degree. C. The silicon film has at least about a 40% degree of crystallinity and mainly {111} preferred orientation. The thin film can be formed by a low pressure chemical vapor deposition process using monosilane (SiH.sub.4) as a source gas at a total reactor pressure of about 15 mTorr or less or at a silane partial pressure of about 10 mTorr or less at a vapor phase deposition temperature of not more than about 600.degree. C.
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Dang Trung
Hearn Brian E.
Seiko Epson Corporation
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