Method of fabricating a bipolar transistor having a high ion con

Fishing – trapping – and vermin destroying

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437 26, 437 61, 437 74, 148DIG86, 148DIG10, H01L 21265

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053895630

ABSTRACT:
A semiconductor device having a reduced leakage current is fabricated in a short time at a low cost with excellent controllability. A buried layer (20) which includes a principal buried layer (21) of high ion concentration containing secondary defects (22) sandwiched between secondary buried layers (3a, 3b) of low ion concentration from upper and lower directions is formed on a semiconductor substrate (1). The secondary defects (22) have stable gettering effects for reducing defects caused during formation of a transistor (200) and contamination by heavy metals. Further, the secondary buried layers (3a, 3b) prevent depletion layers from reaching the secondary defects (22). The semiconductor device can be formed in a short time since no epitaxial growth is employed.

REFERENCES:
patent: 4948742 (1990-08-01), Nishimura et al.
patent: 4962051 (1990-10-01), Liaw
patent: 5023193 (1991-06-01), Manohii et al.

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