Method for making SOI type bipolar transistor

Details Method for making SOI type bipolar transistor Method for making SOI type bipolar transistor

Filed on

1993-12-02

Date issued

1995-02-14

Examiner

Hearn, Brian E.

Patent Class

Fishing, trapping, and vermin destroying

Other Related Categories

437162, 437 62, 437 90, H01L 21265

Type

Patent

Status

active

Patent number

053895614

Description

ABSTRACT:
The present invention is directed to a SOI type bipolar transistor and a method of making the transistor. The transistor comprises an element forming region, which is surrounded on its side portions and a lower surface portion by an insulating layer, an emitter region, a base region, a collector region, each of the emitter, base and collector regions being disposed within the element forming region, and a semiconductor layer formed on the element forming region at a portion corresponding to an opening portion of an interlayer and which becomes an emitter diffusion layer, so that a part of the semiconductor layer is grown under the condition that the semiconductor layer is overgrown over the interlayer in the lateral direction, a junction surface between the base region and the collector region exists under the overgrown portion of the semiconductor layer and the emitter region is surrounded on its side portions and its lower portion by the base region.

REFERENCES:
patent: 4780427 (1988-10-01), Sakai et al.
patent: 4792837 (1988-12-01), Zazzu
patent: 4990991 (1991-02-01), Ikeda et al.
patent: 5091330 (1992-02-01), Cambou et al.
Higaki et al., "A Thin-Base Lateral Bipolar Transistor Fabricated on Bonded SOI", Autumn Meeting Held by Institute of Society of Electronics, Information and Communication Engineers, 1991, pp. SC-9-8, 5-216, 5-217.

Affiliated with

Also associated with

Rating

Method for making SOI type bipolar transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for making SOI type bipolar transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for making SOI type bipolar transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-287540