Method of manufacturing a semiconductor substrate

Details Method of manufacturing a semiconductor substrate Method of manufacturing a semiconductor substrate

1993-03-01

1995-02-14

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437 12, 437 11, 437939, 437946, 437105, 148DIG60, H01L 21306

Patent

active

053895517

ABSTRACT:
A method of manufacturing a semiconductor substrate in which a damage layer is formed on one surface of a wafer. An etching protection film is formed on the damage layer. An epitaxial layer is formed on the other surface of the wafer. Thereafter, the etching protection film is removed to expose the damage layer. The exposed damage layer enhances gettering ability.

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patent: 4249962 (1981-02-01), Celler
patent: 4276114 (1981-06-01), Takano et al.
patent: 4561171 (1985-12-01), Schlosser
patent: 4645546 (1987-02-01), Matsushita
patent: 4659400 (1987-04-01), Garbis et al.
patent: 4751067 (1988-06-01), Levin
IBM Technical Disclosure Bulletin, vol. 20, No. 9, Feb. 1978, New York, US, pp. 3454-3455, M. R. Poponiak, et al., "Impurity Gettering and Removing Gettered Imputities".
IBM Technical Disclosure Bulletin, vol. 22, No. 8B, Jan. 1980, New York, U.S., p. 3856, M. C. Chen, et al., "Pre-Epitaxial Gettering For Defect Reduction in Silicon Films".
Poponiak, M. R., et al. "Gettering Utilizing Implant Damage and Highly Disordered Epitaxial Layer", IBM Technical Disclosure Bulletin, vol. 19, No. 6, pp. 2052-2053 Nov. 1976.

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