Process for fabricating metal plus using metal silicide film

Details Process for fabricating metal plus using metal silicide film Process for fabricating metal plus using metal silicide film

1994-02-14

1995-06-27

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437190, 437194, 437200, H01L 2144, H01L 2148

Patent

active

054279810

ABSTRACT:
A process for fabricating a metal plug having a uniform surface capable of preventing a junction consumption reaction. The process includes preparing a semiconductor substrate which includes a first wiring layer, an insulating film formed over the first wiring layer and a contact hole formed in the insulating film such that the surface of the insulating film is exposed through the contact hole, forming a polysilicon film to a predetermined thickness over the entire exposed surface of the resulting structure after the formation of the contact hole, forming a photoresist pattern at a bottom portion of the contact hole on which the polysilicon film is disposed, removing an exposed portion of the polysilicon film not hidden by the photoresist pattern and then removing the photoresist pattern, forming a first metal film over the entire exposed surface of the resulting structure after the removal of the photoresist pattern, reacting the first metal film with the polysilicon film by a thermal treatment, thereby forming a metallic silicide film at the bottom portion of the contact hole, removing the remaining first metal film not reacted with the polysilicon film and filling the contact hole with a second metal material for forming a metal plug buried in the contact hole formed with the metallic silicide film.

REFERENCES:
patent: 4818723 (1989-04-01), Yen
patent: 5084413 (1992-01-01), Fujita et al.
patent: 5196373 (1993-03-01), Beasom
patent: 5262354 (1993-11-01), Cote et al.
Murarka, Refractory silicides for integrated circuits J. Vac. Soc. Tech 17(4) Jul./Aug. 1980, pp. 775-791.

Affiliated with

Also associated with

Rating

Process for fabricating metal plus using metal silicide film does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for fabricating metal plus using metal silicide film, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for fabricating metal plus using metal silicide film will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-287195