Method of making a sidewall contact

Details Method of making a sidewall contact Method of making a sidewall contact

1990-04-18

1995-06-27

Thomas, Tom

Fishing, trapping, and vermin destroying

437 60, 437186, H01L 218229

Patent

active

054279720

ABSTRACT:
A semiconductor device comprises a P-type semiconductor substrate having a major surface, an insulating film formed on the major surface of the semiconductor substrate, a first polycrystalline silicon layer formed on the insulating film, an n.sup.+ diffused layer formed on the substrate and adjacent to an end portion of the first polycrystalline silicon layer, and a side wall formed on the end portion of the first polycrystalline silicon layer and formed of a second polycrystalline silicon layer for connecting the end portion of the first polycrystalline silicon layer with the n.sup.+ diffused layer.

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H. Sunami et al., "A Corrugated Capacitor Cell", IEEE Transactions on Electron Devices, vol. ED-31, No. 6, (Jun. 1984): 746, 753.

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