Fishing – trapping – and vermin destroying
Patent
1993-08-03
1995-06-27
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
437 48, 437 52, 437 49, H01L 21265
Patent
active
054279666
ABSTRACT:
Herein disclosed is a semiconductor integrated circuit device having a nonvolatile memory function and including a memory cell composed of a field effect transistor having a floating gate electrode and a control gate electrode. A first insulating film for element isolation is buried between the floating gate electrodes. The size of the drain region of the field effect transistor is substantially regulated by both the gap between the first insulating films adjacent to the drain region and the gap between the control gate electrodes adjacent to the drain region. The gaps between the data line at the connection portion with the drain region and the first insulating films individually adjacent to the drain region are equalized. The gaps between the data line at the connection portion with the drain region and the floating gate electrodes or control gate electrodes individually adjacent to the drain region are equalized.
REFERENCES:
patent: 4663645 (1987-05-01), Komori et al.
Mitchell, et al, "A New Self-Aligned Planar Array Cell for Ultra High Density EPROM", 1987 IEDM Tech. Dig. pp. 548-557.
Mukheyee, et al, IEDM Technical Digest, No. 26.1, pp. 616-619 Dec. 1985.
Komori Kazuhiro
Nishimoto Toshiaki
Booth Richard A.
Chaudhuri Olik
Hitachi , Ltd.
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