Method of nucleating tungsten on titanium nitride by CVD without

Details Method of nucleating tungsten on titanium nitride by CVD without Method of nucleating tungsten on titanium nitride by CVD without

1992-06-15

1994-08-30

Pianalto, Bernard

Coating processes

Coating by vapor, gas, or smoke

Metal coating

427250, 427255, 4272551, 4272557, 427404, 4274197, C23C 1600

Patent

active

053426525

ABSTRACT:
Nucleation of a refractory metal such as tungsten is initiated on a substrate of TiN without the use of silane by introducing hydrogen into a CVD reactor before the introduction of the reactant gas containing the metal, brought to reaction temperature and to reaction pressure. The process is most useful for CVD of tungsten onto patterned TiN coated silicon semiconductor wafers. Alternatively, hydrogen is introduced in a mixture with the metal containing gas, such as WF.sub.6, and maintained at subreaction pressure, of for example 100 mTorr, until the substrate is stabilized at a reaction temperature of approximately 400.degree. C. or higher, to cause the dissociation of hydrogen on the wafer surface, then elevated to a relatively high reaction pressure of, for example, 60 Torr at which nucleation is achieved. Also, the reduction reaction that deposits the tungsten film proceeds without the need for a two step nucleation-deposition process.

REFERENCES:
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patent: 4629635 (1986-12-01), Brors
patent: 4650696 (1987-03-01), Raby
patent: 4650698 (1987-03-01), Moriya et al.
patent: 4684542 (1987-08-01), Jasinski et al.
patent: 4830891 (1989-05-01), Nishitani et al.
patent: 4851295 (1989-07-01), Brors
patent: 4874642 (1989-10-01), Garg et al.
patent: 4892843 (1990-01-01), Schmitz et al.
Applied Physics Letters-vol. 59, No. 24, Dec. 9, 1991, New York pp. 3136-3138, XP265155.
Database WPIL; Section Ch, Week, 8818, Mar. 23, 1988 Derwent Publications Ltd., London, GB; Class M13, AN 88-122243 & JP,A,63 065 075 (Fujitsu Ltd.) see abstract.
Database WPIL; Section Ch, Week 9123, May 10, 1991 Derwent Publications Ltd., London, GB; Class L03, AN 91-169463 (Anonymous) & RD,A,325063 see abstract.

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