Method for forming self-aligned field effect device by ion impla

Details Method for forming self-aligned field effect device by ion impla Method for forming self-aligned field effect device by ion impla

1977-08-01

1978-12-05

Rutledge, L. Dewayne

Metal treatment

Compositions

Heat treating

357 23, 357 91, 148187, H01L 21265

Patent

active

041284399

ABSTRACT:
A method is provided for making a field effect transistor which comprises forming a layer of an ion beam masking material on the surface of a semiconductor body of one-type conductivity having at least two adjacent apertures with at least a portion of the masking layer between these apertures and in contact with the semiconductor body surface being an electrically insulative material. Then, a beam of ions of opposite-type conductivity is directed at the mask body at an energy and dosage sufficient to form two buried regions of opposite-type conductivity fully enclosed within said one-type body respectively beneath these two apertures. Finally, sufficient heat is applied so that the two buried regions diffuse upward until they extend respectively to the surface of the semiconductor body beneath the two apertures; the masking material must have a melting point above the temperature of the diffusion step.

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Z. C. Putney, "Self-Aligned Ion Implanted Guard Ring for High-Junction Breakdown Voltage", IBM-TDB, 17, (1975), 2359.
Double et al., "FET Gate Integrity by Ion-Implantation", IBM-TDB., vol. 16 (1973), 8.
Makris et al., "Forming Fine-Line Geometries in Integrated Circuits", IBM-TDB., vol. 16 (1974), 3240.

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