Low bandgap photovoltaic cell with inherent bypass diode

Details Low bandgap photovoltaic cell with inherent bypass diode Low bandgap photovoltaic cell with inherent bypass diode

1993-07-26

1995-02-14

Weisstuch, Aaron

Batteries: thermoelectric and photoelectric

Photoelectric

Panel or array

136249, 136255, 136262, 136293, H01L 3105

Patent

active

053891589

ABSTRACT:
A photovoltaic (PV) cell with a single pn-junction is disclosed that is capable of functioning as both a current source and a bypass diode. The photovoltaic cell is made of material that has a low bandgap energy, 1.0 eV, or less. One version of the PV cell is formed of a GaSb wafer doped with Te to form an n-region; the Te concentration is between 6 and 10.times.10.sup.17 atoms/cm.sup.3. Multiple PV cells of this invention can be connected in series or in parallel or in tandem in a primary-booster tandem pair to form a circuit without the requirement of protecting the individual cells of the circuit with a separate bypass diode.

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