Transistor having high f.sub.t at low currents

Details Transistor having high f.sub.t at low currents Transistor having high f.sub.t at low currents

1976-04-12

1978-01-03

James, Andrew J.

357 35, 357 36, 357 47, 357 49, H01L 2972, H01L 2702, H01L 2712

Patent

active

040670376

ABSTRACT:
A transistor structure capable of high frequency operation with low collector currents is obtained by fabricating the transistor using nitride techniques to minimize the emitter area and base width area beyond that obtainable by conventional masking techniques. The emitter is surrounded on three sides by low capacitance dielectric which reduces its emitter-to-collector capacitance and hence improves high frequency performance.

REFERENCES:
patent: 3409482 (1968-11-01), Lindmayer et al.
patent: 3455748 (1969-07-01), Lindmayer et al.
patent: 3458367 (1969-07-01), Yasufuku
patent: 3717507 (1973-02-01), Abe
patent: 3943014 (1976-03-01), Yoshizawa
Radiation-Tolerant Silicon Transistor, by Lauritzen, Nov. 1964, pp. 39-46.
Microwave Transistor; by Katori et al.; Fujitsu Scientific & Technical Journal; Sept. 1972; pp. 153-175.

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