Method of making pillar-type structure on semiconductor...

Details Method of making pillar-type structure on semiconductor... Method of making pillar-type structure on semiconductor...

2000-09-29

2002-01-01

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

C438S626000, C438S631000, C438S637000, C438S669000, C257S758000, C257S760000, C257S765000

Reexamination Certificate

active

06335257

ABSTRACT:

FIELD OF THE INVENTION
The present invention relates to a method in making a pillar-type structure on a semiconductor substrate, and more particularly to a method in making pillar-type capacitor node on a silicon substrate.
BACKGROUND OF THE INVENTION
In U.S. Pat. No. 5,482,885 Water Lur et al. had provided a method to form a capacitor in a DRAM cell by depositing a conductive polysilicon electrode layer on the substrate. Oxide lines are then formed on the polysilicon layer. Using the oxide lines as a mask to etch the polysilicon layer, pillar-type capacitor node is formed in the plolysilicon electrode layer.
The present application however provides a different way to form a pillar-type capacitor node on the silicon substrate.
OBJECT OF THE INVENTION
It is therefore an object of the present invention to provide a method in making a pillar-type structure on semiconductor substrate, by depositing sequentially a conductive polysilicon electrode layer, a nitride layer and a silicon layer on the substrate, and then forming required oxide pillars in the silicon layer to act as a mask for etching the conductive polysilicon electrode layer.


REFERENCES:
patent: 5861673 (1999-01-01), Yoo et al.
patent: 5895975 (1999-04-01), Lin
patent: 6000280 (1999-12-01), Miller et al.

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