Method of making radiation resistant MOS transistor

Details Method of making radiation resistant MOS transistor Method of making radiation resistant MOS transistor

1977-08-24

1981-04-07

Tupman, W. C.

Metal working

Method of mechanical manufacture

Assembling or joining

357 59, B01J 1700

Patent

active

042597790

ABSTRACT:
The radiation resistance of an MOS transistor is improved by making the transistor in a manner such that, after the gate insulation layer is formed, all further steps are carried out at a relatively low temperature, i.e., less than about 900.degree. C. The source and drain regions are preferably formed by ion implantation with very little or no post implant thermal activation, and the metallization is applied by low temperature techniques.

REFERENCES:
patent: 3906620 (1975-09-01), Anzai
patent: 4035829 (1977-07-01), Ipri
patent: 4075754 (1978-02-01), Cook

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