Method for writing on archival memory target by ion damage

Details Method for writing on archival memory target by ion damage Method for writing on archival memory target by ion damage

1977-02-22

1978-07-04

Fears, Terrell W.

Static information storage and retrieval

Read only systems

Semiconductive

315 845, 328123, 365128, G11C 1300

Patent

active

040992616

ABSTRACT:
A method for storing data in an archival memory semiconductor target by inducing damage to the semiconductor lattice at selected ones of a plurality of storage sites arranged as a two-dimensional array upon a surface of the target. Ions are accelerated and collimated as a beam to impinge upon a target surface to induce the damage to a controlled depth, whereby subsequent illumination of a damaged data site by an electron beam will allow the beam-produced electron-hole pairs to recombine within the damaged area to prevent increased current flow and read a binary zero bit, while hole migrations through a target depletion region will cause increased current flow, at an undamaged data site, to indicate a binary one data bit.

REFERENCES:
patent: 3362017 (1968-01-01), Brahm
patent: 3763476 (1973-10-01), Wilson
patent: 3879714 (1975-04-01), Veith

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