Method of removing silicon from a substrate

Details Method of removing silicon from a substrate Method of removing silicon from a substrate

2008-01-08

2008-01-08

Smoot, Stephen W. (Department: 2813)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

C216S099000

Reexamination Certificate

active

07316981

ABSTRACT:
A wet etching method of removing silicon from a substrate includes depositing a layer comprising silicon in elemental form over a substrate. The layer is exposed to an aqueous liquid etching solution comprising a hydroxide and a fluoride, and having a pH of at least 10, under conditions and for a period of time effective to etch the elemental silicon from the substrate. Wet etching can be employed in methods of forming trench isolation, and in other methods. Other aspects and implementations are contemplated.

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Bertagna et al.,Ionic components dependence of the charge transfer reactions at the silicon/HF solution interface, J. Solid State Electrochem, vol. 4, pp. 42-51 (1999).

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