Magnetoresistance device with a diffusion barrier between a...

Details Magnetoresistance device with a diffusion barrier between a... Magnetoresistance device with a diffusion barrier between a...

2008-07-01

2008-07-01

Evans, Jefferson (Department: 2627)

Dynamic magnetic information storage or retrieval

Head

Magnetoresistive reproducing head

C360S322000

Reexamination Certificate

active

07394626

ABSTRACT:
A magnetoresistance device is provided for improving thermal stability of a magnetoresistance element by preventing inter-diffusion between a conductor (such as a via and an interconnection) for connecting the magnetoresistance element to another element and layers constituting the magnetoresistance element. A magnetoresistance device is composed of a magnetoresistance element, a non-magnetic conductor providing electrical connection between said magnetoresistance element to another element, and a diffusion barrier structure disposed between the conductor and said magnetoresistance element, the magnetoresistance element including a free ferromagnetic layer having reversible spontaneous magnetization, a fixed ferromagnetic layer having fixed spontaneous magnetization, and a tunnel dielectric layer disposed between said free and fixed ferroelectric layer.

REFERENCES:
patent: 5986858 (1999-11-01), Sato et al.
patent: 5998016 (1999-12-01), Sasaki et al.
patent: 6544801 (2003-04-01), Slaughter et al.
patent: 6611405 (2003-08-01), Inomata et al.
patent: 6710987 (2004-03-01), Sun et al.
patent: 6801414 (2004-10-01), Amano et al.
patent: 6897532 (2005-05-01), Schwarz et al.
patent: 6903909 (2005-06-01), Sharma et al.
patent: 7009266 (2006-03-01), Shi et al.
patent: 7078776 (2006-07-01), Nishinohara et al.
patent: 7180141 (2007-02-01), Eliason et al.
patent: 7205564 (2007-04-01), Kajiyama
patent: 7215566 (2007-05-01), Kanegae
patent: 7264974 (2007-09-01), Horng et al.
patent: 2002/0044396 (2002-04-01), Amano et al.
patent: 2002/0102828 (2002-08-01), Schlosser
patent: 2003/0134096 (2003-07-01), Chen et al.
patent: 2003/0179601 (2003-09-01), Seyyedy et al.
patent: 2004/0156232 (2004-08-01), Saito et al.
patent: 2005/0219769 (2005-10-01), Shimura et al.
patent: 2005/0276099 (2005-12-01), Horng et al.
patent: 1 202 357 (2002-05-01), None
patent: 62-132211 (1987-06-01), None
patent: 2-195284 (1990-08-01), None
patent: 3-268216 (1991-11-01), None
patent: 10-65232 (1998-03-01), None
patent: 10-269532 (1998-10-01), None
patent: 2000-20922 (2000-01-01), None
patent: 2001-14843 (2001-01-01), None
patent: 2001-84756 (2001-03-01), None
patent: 2001-237471 (2001-08-01), None
patent: 2002-25013 (2002-01-01), None
patent: 2002-74627 (2002-03-01), None
patent: 2002-158381 (2002-05-01), None
patent: 2002-163810 (2002-06-01), None
patent: 2002-329903 (2002-11-01), None
patent: 2003-273420 (2003-09-01), None
patent: 2003-324187 (2003-11-01), None
patent: 2004-519859 (2004-07-01), None
patent: WO 01/71735 (2001-09-01), None
Z. Zhang et al., “Annealing effect of magnetic tunnel junctions with one FeOx layer inserted at the AI2O3/COFe interface”, Applied Physics Letters, vol. 78, No. 19, (May 7, 2001, pp. 2911-2913.
K. Matsuda et al., “Reduced magnetoresistance in magnetic tunnel junctions caused by geometrical artifacts”, Applied Physics Letters, vol. 77, No. 19, (Nov. 6, 2000), pp. 3060-3062.
J.S. Moore et al., “Geometrically enhanced magnetoresistance in ferromagnet-insulator-ferromagnet tunnel junctions”, Applied Physics Letters, vol. 69, No. 5, (Jul. 29, 1996), pp. 708-710.
S. Ohnuma et al., “Soft Magnetic Films with High Electrical Resistivity”, Journal of the Magnetics Society of Japan, vol. 19, No. 1, (1995), pp. 19-25 with English Abstract.
U.S. Appl. No. 10/539,373, filed by Yoshiyuki Fukumoto, et al. on Jun. 16, 2005.
J. J. Sun, et al.; “Low resistance and high thermal stability of spin-dependent tunnel junctions with synthetic antiferromagnetic CoFe/Ru/CoFe pinned layers”; Applied Physics Letters; Apr. 24, 2000; vol. 76, No. 17; pp. 2424-2426.
S. Cardoso, et al.; “Influence of Ta antidiffusion barriers on the thermal stability of tunnel junctions”; Applied Physics Letters; Jun. 19, 2000; vol. 76, No. 25; pp. 3792-3794.
T. Ochiai, et al.; “Improved Thermal Stability of Ferromagnetic Tunnel Junctions With a CoFe/CoFeOx/CoFe Pinned Layer”; IEEE Transactions on Magnetics; Sep. 2003; vol. 39, No. 5; pp. 2797-2799.

Affiliated with

Also associated with

Rating

Magnetoresistance device with a diffusion barrier between a... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Magnetoresistance device with a diffusion barrier between a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetoresistance device with a diffusion barrier between a... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2814247