Semiconductor module

Details Semiconductor module Semiconductor module

2008-06-10

2008-06-10

Thai, Luan (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

For plural devices

C257S691000, C257S692000, C257SE23062, C361S306300, C361S306200, C361S763000

Reexamination Certificate

active

07385286

ABSTRACT:
At least four terminal electrodes are provided on a surface of multi-layer substrate main body. An electric functional layer is selectively provided at an internal area of said multi-layer substrate placed at a downward position of all terminal electrodes in a substrate thickness direction. A semiconductor device is flip-chip-bonded to the terminal electrodes. Thus, the semiconductor device is electrically connected to the electric functional layer at a short distance. As a result, a reduction in parasitic inductance and an improvement in high frequency characteristic can be accomplished. Generation of height variations between the terminal electrodes can be prevented, and the semiconductor device is stably flip-chip-bonded to the multi-layer substrate.

REFERENCES:
patent: 6184577 (2001-02-01), Takemura et al.
patent: 6370013 (2002-04-01), Iino et al.
patent: 6407929 (2002-06-01), Hale et al.
patent: 6532143 (2003-03-01), Figueroa et al.
patent: 6611419 (2003-08-01), Chakravorty
patent: 62-32334 (1994-08-01), None
patent: 6-164150 (1994-10-01), None
patent: 06-302760 (1994-10-01), None
patent: 6-302760 (1994-10-01), None
Japanese Office Action issued in corresponding Japanese Patent Application No. JP 2002-163868, dated Sep. 12, 2006.

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