Semiconductor device

Details Semiconductor device Semiconductor device

2008-07-08

2008-07-08

Tran, Minh-Loan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S622000, C257S629000, C257S632000, C257S638000, C257S135000, C257S153000, C257S177000, C257SE29118, C257SE29122, C257SE29130

Reexamination Certificate

active

07397126

ABSTRACT:
The present invention provides inhibiting an electrical leakage caused by anion migration. A trenched portion15is provided as ion migration-preventing zone between a source electrode4and a gate electrode5. The trenched portion15is formed so as to surround a periphery of the source electrode4.

REFERENCES:
patent: 2001/0001427 (2001-05-01), Atakov et al.
patent: 2001/0011761 (2001-08-01), Imoto
patent: 2002/0101754 (2002-08-01), Hidaka et al.
patent: 2004/0094841 (2004-05-01), Matsuzaki et al.
patent: 2005/0023670 (2005-02-01), Hata et al.
patent: 9-148520 (1997-06-01), None
patent: 2001-274206 (2001-10-01), None

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