Solid state imaging device with lateral overflow drain and...

Details Solid state imaging device with lateral overflow drain and... Solid state imaging device with lateral overflow drain and...

2008-01-22

2008-01-22

Ho, Tuan (Department: 2622)

Television

Camera, system and detail

Solid-state image sensor

C257S230000

Reexamination Certificate

active

07321392

ABSTRACT:
A solid state imaging device comprises channel regions of one conductivity type arranged to extend along a first direction in parallel to each other with predetermined intervals on one surface of a semiconductor substrate, drain regions of the one conductivity type at high doping density, which are arranged to extend along the first direction between adjacent channel regions, separation regions disposed in the interval between one of the channel regions and one of the drain regions, and transfer electrodes arranged in parallel to each other to extend along a second direction which intersets the first direction on the semiconductor substrate. The width of the separation region is narrower in a region beneath at least one transfer electrode in each predetermined set of transfer electrodes than in a region beneath the remaining transfer electrodes in the set of transfer electrodes.

REFERENCES:
patent: 4696021 (1987-09-01), Kawahara et al.
patent: 4995061 (1991-02-01), Hynecek
patent: 5057926 (1991-10-01), Watanabe
patent: 6369413 (2002-04-01), Hynecek
patent: 6573937 (2003-06-01), Nakashiba
patent: 10-326887 (1998-12-01), None

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