Dynamic magnetic information storage or retrieval – Head – Magnetoresistive reproducing head
Reexamination Certificate
2008-05-13
2008-05-13
Evans, Jefferson (Department: 2627)
Dynamic magnetic information storage or retrieval
Head
Magnetoresistive reproducing head
Reexamination Certificate
active
07372674
ABSTRACT:
A magnetic tunnel transistor (MTT) having a pinned layer that is extended in a stripe height direction and is exchange coupled with an antiferromagnetic (AFM) layer in the extended portion outside of the active area of the sensor. Exchange coupling only the extended portion of the pinned layer with the AFM results in strong, robust pinning of the pinned layer while eliminating the AFM layer from the active portion of the sensor. The presence of an AFM layer within the active area of the sensor would result in an extreme loss of hot electrons resulting in a prohibitively large loss of performance. Therefore, eliminating the AFM layer from the active area provides a very large performance enhancement while maintaining robust pinning.
REFERENCES:
patent: 4700211 (1987-10-01), Popovic et al.
patent: 6611405 (2003-08-01), Inomata et al.
patent: 6751074 (2004-06-01), Inomata et al.
patent: 6818458 (2004-11-01), Gill
patent: 6833598 (2004-12-01), Sato et al.
patent: 7001680 (2006-02-01), Gill
patent: 7230804 (2007-06-01), Gill
patent: 7276384 (2007-10-01), Parkin et al.
patent: 2003/0197984 (2003-10-01), Inomata et al.
patent: 2004/0175596 (2004-09-01), Inomata et al.
patent: 2005/0025999 (2005-02-01), Gill
patent: 2005/0226043 (2005-10-01), Parkin et al.
patent: 2005/0282379 (2005-12-01), Saito et al.
patent: 2006/0033145 (2006-02-01), Kakoschke et al.
patent: 2006/0043443 (2006-03-01), Sugahara et al.
patent: 2006/0118839 (2006-06-01), Sugahara et al.
Sebastiaan van Dijken, Xin Jiang and Stuart S.P. Parkin, “Giant Magnetocurrent Exceeding 3400% in Magnetic Tunnel Transistors With Spin-valve Base Layers,” Applied Physics Letters, vol. 83, No. 5, Aug. 4, 2003.
Evans Jefferson
Hitachi Global Storage Technologies - Netherlands B.V.
Zilka-Kotab, PC
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