Method of making a diamond film

Details Method of making a diamond film Method of making a diamond film

1994-06-06

1995-06-27

Breneman, R. Bruce

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

423446, 4234473, C30B 2904

Patent

active

054270545

ABSTRACT:
A process of forming high quality diamond films, wherein non-diamond components and crystal defects are significantly reduced. Diamond films are formed on a diamond substrate by vapor-phase synthesis using a source gas, wherein the atomic concentrations of oxygen and carbon, [0] and [C], respectively, in the source gas satisfy the condition that 0.01.ltoreq.[C]/([C]+[O]).ltoreq.0.40. Boron (B) doped p-type semiconducting films can also be formed using the same source gas which further includes a B-containing compound.

REFERENCES:
patent: 5225275 (1993-07-01), Aida
patent: 5236545 (1993-08-01), Pryor
patent: 5250149 (1993-10-01), Kimoto et al.
patent: 5275798 (1994-01-01), Aida

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