Anisotropic etch method

Details Anisotropic etch method Anisotropic etch method

2008-05-20

2008-05-20

Goudreau, George A. (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S720000, C438S723000, C438S725000, C438S729000, C438S738000

Reexamination Certificate

active

07375036

ABSTRACT:
A method to anisotropically etch an oxide/silicide/poly sandwich structure on a silicon wafer substrate in situ, is disclosed, using a single parallel plate plasma reactor chamber and a single inert cathode, with a variable gap between cathode and anode. This method has an oxide etch step and a silicide/poly etch step. The fully etched sandwich structure has a vertical profile at or near 90° from horizontal, with no bowing or notching.

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