Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2008-03-18
2008-03-18
Lindsay, Jr., Walter (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S471000, C257S476000, C257S485000, C257S244000, C257S267000, C257S280000, C257S281000, C257S284000, C257S385000
Reexamination Certificate
active
07345350
ABSTRACT:
A method for forming a conductive via in a semiconductor component is disclosed. The method includes providing a substrate having a first surface and an opposing, second surface. At least one hole is formed in the substrate extending between the first surface and the opposing, second surface. A seed layer is formed on a sidewall defining the at least one hole of the substrate and coated with a conductive layer, and a conductive or nonconductive filler material is introduced into the remaining space within the at least one hole. A method of forming a conductive via through a substrate using a blind hole is also disclosed. Semiconductor components and electronic systems having substrates including the conductive via of the present invention are also disclosed.
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Lindsay, Jr. Walter
Micro)n Technology, Inc.
TraskBritt
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