Method of writing to non-volatile semiconductor memory...

Details Method of writing to non-volatile semiconductor memory... Method of writing to non-volatile semiconductor memory...

2008-05-20

2008-05-20

Phung, Anh (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185030

Reexamination Certificate

active

07376016

ABSTRACT:
In a flash memory, after an initial write operation ends, each bit line associated with a memory cell subjected to a write is precharged and each bit line associated with a memory cell that is not subjected to the write is discharged and verified to detect a memory cell low in threshold voltage and a memory cell thus detected is subjected to an additional write. The verification can be verified without being affected by a current flowing through the memory cell that is not subjected to the write. All memory cells can have their respective threshold voltages set accurately.

REFERENCES:
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patent: 5602789 (1997-02-01), Endoh et al.
patent: 6128229 (2000-10-01), Nobukata
patent: 6487122 (2002-11-01), Shibata et al.
patent: 2000-123581 (2000-04-01), None

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