Transparent electrode

Details Transparent electrode Transparent electrode

2008-07-15

2008-07-15

Nguyen, Cuong Q (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With reflector, opaque mask, or optical element integral...

C257S088000, C257SE33072

Reexamination Certificate

active

07399994

ABSTRACT:
A transparent electrode for use in a gallium nitride-based compound semiconductor light-emitting device having an emission wavelength of 440 nm or less, includes a metal layer disposed in contiguity to a p-type semiconductor layer and a current diffusion layer disposed on the metal layer. The transparent electrode contains substantially no Au in the whole region thereof. The metal layer contains any one element selected from the group consisting of Pt, Ir, Ru and Rh as a main component. The current diffusion layer contains any one element selected from the group consisting of Pt, Ir, Ru and Rh as a main component except for the case where the metal layer and the current diffusion layer have the same composition. It is possible to provide a white light-emitting device provided with the transparent electrode, a white light-emitting lamp using the white light-emitting device and a lighting fixture using the white light-emitting lamp.

REFERENCES:
patent: 5-319998 (1993-12-01), None
patent: 9-157092 (1997-06-01), None

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