Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With a step of measuring – testing – or sensing
Reexamination Certificate
2008-05-27
2008-05-27
Hiteshew, Felisa (Department: 1792)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With a step of measuring, testing, or sensing
C117S088000, C117S089000, C117S200000, C117S951000, C118S719000, C118S725000, C427S249150
Reexamination Certificate
active
07377977
ABSTRACT:
A method of growing a crystal on a substrate disposed in a reactor, that provides a reactor chamber in which the substrate is disposed, includes flowing reactive gases inside the reactor chamber toward the substrate, the reactive gases comprising components that are able to bond to each other to form the crystal, and flowing buffer gas in the reactor chamber between the reactive gases and a wall of the reactor, where the flowing buffer gas inhibits at least one of a first material at least one of in and produced by the reactive gases from reaching the reactor wall and a second material produced by the reactor wall from reaching the reactive gases in the reactor chamber before the reactive gases reach the substrate.
REFERENCES:
patent: 5704985 (1998-01-01), Kordina et al.
patent: 5879462 (1999-03-01), Kordina et al.
patent: 6030661 (2000-02-01), Kordina et al.
patent: 6039812 (2000-03-01), Ellison et al.
patent: 6048398 (2000-04-01), Vehanen et al.
patent: 6299683 (2001-10-01), Rupp et al.
patent: 6461944 (2002-10-01), Neudeck et al.
patent: 6613695 (2003-09-01), Pomarede et al.
patent: 6692568 (2004-02-01), Cuomo et al.
Motakef Shariar
Worlikar Aniruddha S.
Cape Simulations, Inc.
Hiteshew Felisa
Mintz Levin Cohn Ferris Glovsky and Popeo P.C.
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