Method for manufacturing glass substrate

Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means

Reexamination Certificate

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Details

C438S691000, C438S745000, C216S097000, C134S001200

Reexamination Certificate

active

07384870

ABSTRACT:
A method for providing a high quality glass substrate that if free of residual polishing particles. The method includes polishing the surface of the glass plate with a polishing agent containing cerium oxide particles, washing the glass plate with washing agent containing the three components of acid, a reducing agent, and fluorine ion. The washing agent is provided with an etching effect by the acid, a reducing and decomposing effect by the reducing agent, and a dissolving enhancing effect by the cerium oxide by fluorine ion. The synergistic effect of the three components provides the washing agent with an extremely high ability for washing away cerium oxide and foreign matter from the surface of the glass plate through a small amount of etching such that potential scratches are not produced.

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