Pattern writing and forming method

Details Pattern writing and forming method Pattern writing and forming method

2008-06-17

2008-06-17

Young, Christopher G. (Department: 1795)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S492300, C355S052000, C355S053000, C355S077000, C430S005000, C430S030000, C430S296000, C430S396000, C430S942000

Reexamination Certificate

active

07388216

ABSTRACT:
A pattern forming method is proposed for easy correction of a pattern-size variation occurring in an etching process. An energy beam is radiated onto a resist-applied target while the energy beam is adjusted to correct the pattern-size variation occurring in the etching process. The resist on the target is developed to form a resist pattern. The target is etched with the resist pattern as a mask, thus forming patterns thereon.

REFERENCES:
patent: 10-10701 (1998-01-01), None
patent: 11-204415 (1999-07-01), None
patent: 3074675 (2000-08-01), None
Munehiro Ogasawara, et al. “Reduction of Long Range Fogging Effect in a High Acceleration Voltage Electron Beam Mask Writing System” J. Vac. Sci. Technol. B 17(6), Nov./Dec. 1999, pp. 2936-2939.

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