Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Having substrate registration feature
Reexamination Certificate
2008-07-29
2008-07-29
Schillinger, Laura M (Department: 2813)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Having substrate registration feature
C438S149000
Reexamination Certificate
active
07405134
ABSTRACT:
Exemplary embodiments of the present invention provide a method of manufacturing a semiconductor device that can take a connection between layers without giving damage to a layer, which is underlying. The semiconductor device includes forming conductive members Ms and Md at a predetermined position of a semiconductor film, forming an insulating film on a whole surface of a substrate excluding the conductive members Ms and Md, and forming a conductive film that is connected to the semiconductor film with the conductive member Ms and Md.
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Tanaka Hideki
Yudasaka Ichio
Oliff & Berridg,e PLC
Schillinger Laura M
Seiko Epson Corporation
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