Cubic boron nitride preparation

Coating processes – Electrical product produced – Integrated circuit – printed circuit – or circuit board

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204164, 204192N, 427 42, 4272552, C23C 1100

Patent

active

042973872

ABSTRACT:
A deposit of cubic boron nitride is placed on a substrate by an activated reactive evaporation method. The method includes: supporting and heating a substrate in vacuum; evaporating metal vapors into a zone between the substrate and a metals alloy source, said source consisting essentially of at least 60 percent by weight to balance of boron with from 2 to 12 percent by weight of aluminum and at least 0.2 to 24 percent by weight of at least one of cobalt, nickel, manganese, or other aluminide forming element; introducing ammonia gas into the zone; and generating an electrical field in the zone for ionizing the metal vapors and gas atoms in the zone. In the method the substrate generally is heated to a temperature of at least 300.degree. C. with preferred substrate temperatures between about 500.degree. C. and 1100.degree. C., the ammonia gas pressure preferably is about 1.times.10.sup.-4 torr to 8.times.10.sup.-3 torr, and a plasma activation in the zone desirably may be provided by employing a deflection electrode maintained at a positive voltage potential and positioned between the substrate and the source of evaporating metal vapors.

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patent: 3531678 (1970-09-01), Schiavone
patent: 3540926 (1970-11-01), Rairden
patent: 3692566 (1972-09-01), Branovich et al.
patent: 3791852 (1974-02-01), Bunshah
patent: 3918219 (1975-11-01), Wentorf et al.

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