Asymmetric field transistors (FETs)

Details Asymmetric field transistors (FETs) Asymmetric field transistors (FETs)

2008-07-29

2008-07-29

Gurley, Lynne A. (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Schottky barrier

Specified materials

C438S570000, C257S471000, C257S449000, C257S408000, C257S409000, C257S368000, C257S344000, C257SE27138

Reexamination Certificate

active

07405458

ABSTRACT:
A semiconductor structure and a method for forming the same. The structure includes (a) a semiconductor channel region, (b) a semiconductor source block in direct physical contact with the semiconductor channel region; (c) a source contact region in direct physical contact with the semiconductor source block, wherein the source contact region comprises a first electrically conducting material, and wherein the semiconductor source block physically isolates the source contact region from the semiconductor channel region, and (d) a drain contact region in direct physical contact with the semiconductor channel region, wherein the semiconductor channel region is disposed between the semiconductor source block and the drain contact region, and wherein the drain contact region comprises a second electrically conducting material; and (e) a gate stack in direct physical contact with the semiconductor channel region.

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