Semiconductor device including interconnects formed by...

Details Semiconductor device including interconnects formed by... Semiconductor device including interconnects formed by...

2008-04-22

2008-04-22

Im, Junghwa M. (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S759000, C257S760000, C257S700000, C257S774000, C257S751000, C257SE21579, C257SE21577, C438S622000

Reexamination Certificate

active

07361992

ABSTRACT:
After etching the interlayer dielectric film4formed on the lower layer interconnect line1into a shape with holes, the upper layer dielectric film6is etched into a shape with trenches utilizing the etching stopper5. The etching stopper5which is exposed at the bottom of the trench is removed by additional etching, and then, the interlayer dielectric film4which is exposed at the bottom of the trench is etched back to a predetermined thickness. Subsequently, the hole and the trench are filled with an interconnect metal10.

REFERENCES:
patent: 6218287 (2001-04-01), Matsumoto
patent: 6225207 (2001-05-01), Parikh
patent: 6603204 (2003-08-01), Gates et al.
patent: 6764810 (2004-07-01), Ma et al.
patent: 2002/0008323 (2002-01-01), Watanabe et al.
Chinese Office Action issued in corresponding Chinese Patent App. No. 03143451.7, dated Aug. 18, 2006.
Chinese Office Action, Date of Dispatch: Feb. 24, 2006.

Affiliated with

Also associated with

Rating

Semiconductor device including interconnects formed by... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device including interconnects formed by..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device including interconnects formed by... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2796108