Image sensor module and method of manufacturing the same

Details Image sensor module and method of manufacturing the same Image sensor module and method of manufacturing the same

2011-08-02

2011-08-02

Mandala, Victor (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

C257S433000, C257S448000, C257SE31110, C257SE31124

Reexamination Certificate

active

07989909

ABSTRACT:
An image sensor module includes a semiconductor chip. Photodiode units are disposed in an active region of the semiconductor chip to convert light into electric signals. Pads are disposed in a peripheral region formed around the active region and the pads are electrically connected to the photodiode units. A connecting region is formed around the peripheral region. Re-distribution layers are electrically connected to respective pads and extend to the connecting region. A transparent substrate covers the photodiode units and the pads and exposes at least a portion of the re-distribution layers. Connecting layers are electrically connected to the respective re-distribution layers and extend to a top surface of the transparent substrate. Connecting members are connected to the respective connecting layers disposed on the top surface of the transparent substrate.

REFERENCES:
patent: 2008/0001241 (2008-01-01), Tuckerman et al.
patent: 2009/0166785 (2009-07-01), Camacho et al.
patent: 1020060052055 (2006-05-01), None
patent: 1020070067634 (2007-06-01), None
patent: 1020070103555 (2007-10-01), None
patent: 2008/108970 (2008-09-01), None

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