Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation
Reexamination Certificate
2008-04-15
2008-04-15
Rose, Kiesha (Department: 4176)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Responsive to electromagnetic radiation
C438S029000, C438S059000, C438S200000
Reexamination Certificate
active
07358107
ABSTRACT:
A method of fabricating a germanium photo detector includes preparing a silicon substrate; depositing and planarizing a silicon oxide layer; forming contact holes in the silicon oxide layer which communicate with the underlying silicon substrate; growing an epitaxial germanium layer of a first type on the silicon oxide layer and in the contact holes; growing an intrinsic germanium layer on the epitaxial germanium layer and any exposed silicon oxide layer; growing a germanium layer of a second type on the intrinsic germanium layer and any exposed silicon oxide layer; depositing a layer of covering material take from the group of materials consisting of polysilicon, polysilicon-germanium and In2O3—SnO2; and etching the covering material to form individual sensing elements.
REFERENCES:
patent: 2005/0205954 (2005-09-01), King et al.
Li et al.,Selective growth of germanium on Si(100)through vias of SiO2nanoplate using solid source molecular beam epitaxy,Applied Physics Letters, vol. 83, No. 24, pp. 5032-5034 (2003).
Li et al.,Heteroepitaxy of high-quality Ge on Si by nanoscale Ge seeds grown through a thin layer of SiO2, Applied Physics Letters, vol. 85, No. 11, pp. 1928-1930 (2004).
Langdo et al.,High quality Ge on Si by epitaxial necking,Applied Physics Letters, vol. 76, No. 25, pp. 3700-3702 (2000).
Hsu Sheng Teng
Lee Jong-Jan
Maa Jer-shen
Tweet Douglas J.
Jones Eric W
Rose Kiesha
Sharp Laboratories of America Inc.
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