Method of forming an improved AP1 layer for a TMR device

Metal working – Method of mechanical manufacture – Electrical device making

Reexamination Certificate

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Details

C029S603120, C029S603160, C029S603180, C204S192200, C204S192340, C360S324110, C360S324120, C360S327220

Reexamination Certificate

active

07377025

ABSTRACT:
A TMR read head with improved voltage breakdown is formed by laying down the AP1 layer as two or more layers. Each AP1 sub-layer is exposed to a low energy plasma for a short time before the next layer is deposited. This results in a smooth surface, onto which to deposit the tunneling barrier layer, with no disruption of the surface crystal structure of the completed AP1 layer.

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Song et al., “Demonstrating a Tunneling Magneto-Resistive Read Head,” IEEE Trans. on Magnetics, vol. 36, No. 5, Sep. 2000, pp. 2545-2548.
Ohashi et al., “Low Resistance Tunnel magneto resistive Head,” IEEE Trans. on Magnetics, vol. 36, No. 5, Sep. 2000, pp. 2549-2553.
Freitas et al., “Spin Dependent Tunnel Junctions for Memory and Read-Head Applications,” IEEE Trans. on Magnetics, vol. 36, No. 5, Sep. 2000, pp. 2796-2801.

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