Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Magnetic field
Reexamination Certificate
2008-05-20
2008-05-20
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Magnetic field
C257S422000, C365S113000
Reexamination Certificate
active
07375405
ABSTRACT:
A magnetoresistance effect (MR) device incorporating a spin valve film, and a magnetic head, a magnetic head assembly and a magnetic recording/reproducing system incorporating the MR device, wherein the magnetization direction of a free layer is at a certain angle to the magnetization direction of a second ferromagnetic layer therein when the applied magnetic field is zero. A pinned magnetic layer includes a pair of ferromagnetic films antiferromagnetically coupled to each other via a coupling film existing therebetween. The magnetization direction of either one of the pair of ferromagnetic films constituting the pinned magnetic layer is maintained, and a nonmagnetic high-conductivity layer is disposed adjacent to a first ferromagnetic layer on the side opposite to the side on which the first ferromagnetic layer is contacted with a nonmagnetic spacer layer. With that constitution, the device has extremely high sensitivity, and the bias point in the device is well controlled.
REFERENCES:
patent: 4789910 (1988-12-01), Otsuka et al.
patent: 5422571 (1995-06-01), Gurney
patent: 5465185 (1995-11-01), Heim
patent: 5688605 (1997-11-01), Iwasaki et al.
patent: 5701222 (1997-12-01), Gill et al.
patent: 5705973 (1998-01-01), Yuan et al.
patent: 5729410 (1998-03-01), Fontana et al.
patent: 5729411 (1998-03-01), Kishi et al.
patent: 5739988 (1998-04-01), Gill
patent: 5793697 (1998-08-01), Scheuerlein
patent: 5847907 (1998-12-01), Hashimoto
patent: 5898549 (1999-04-01), Gill
patent: 6195232 (2001-02-01), Cohen
patent: 6303218 (2001-10-01), Kamiguchi et al.
patent: 6338899 (2002-01-01), Fukuzawa et al.
patent: 6853520 (2005-02-01), Fukuzawa et al.
patent: 2002/0048127 (2002-04-01), Fukuzawa et al.
patent: 2005/0167770 (2005-08-01), Fukuzawa et al.
patent: 10-261209 (1998-09-01), None
M. Saito, et al., Digests of the 22ndConf. On Magnetism In Japan, p. 309, “PtMn Dual Spin Valve Films Using Co/Ru/Co Synthetic Ferrimagnet Pinned Layers,” 1998.
U.S. Appl. No. 11/551,868, filed Oct. 23, 2006, Yoshikawa et al.
U.S. Appl. No. 11/079,322, filed Mar. 15, 2005, Fukuzawa et al.
U.S. Appl. No. 11/844,069 filed Aug. 23, 2007, Yoshikawa, et al.
U.S. Appl. No. 11/079,322 filed Mar. 15, 2005, Fukuzawa, et al.
Fuke Hiromi
Fukuzawa Hideaki
Hashimoto Susumu
Iwasaki Hitoshi
Kamiguchi Yuzo
Jackson Jerome
Kabushiki Kaisha Toshiba
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Valentine Jami M
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