Method of producing a reflection mask blank, method of...

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

Reexamination Certificate

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C430S311000, C430S004000, C204S192110, C204S192270, C204S192280, C148S713000, C134S003000

Reexamination Certificate

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07314688

ABSTRACT:
A reflection mask blank and a method of producing a reflection mask blank by forming, on a substrate, at least a multilayer reflection film for reflecting exposure light and an absorber layer formed on the multilayer reflection film for absorbing the exposure light. In order to avoid change over lapsed time in properties of the multilayer reflection film, the substrate with the multilayer reflection film is subjected to heat treatment. The heat treatment is during deposition and/or after deposition of the multilayer reflection film. A reflection mask is made from the reflection mask blank according to a reflection mask production method and a semiconductor is made from the reflection mask according to a semiconductor production method.

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patent: 7-283116 (1995-10-01), None
patent: 2001-291661 (2001-10-01), None
patent: 2002-246299 (2002-08-01), None
Levinson, Harry J., Principles of Lithography, 2001, SPIE—The International Society for Optical Engineering, p. 343.

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