Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2008-01-29
2008-01-29
Hoang, Quoc (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000, C257SE29151, C438S149000, C438S508000, C438S508000
Reexamination Certificate
active
07323713
ABSTRACT:
A method of producing a thin film transistor array substrate which includes an insulating substrate, a display pixel having a pixel electrode connected to a drain electrode, a gate wiring, and a source wiring perpendicular to the gate wiring, comprising forming a first thin metal multi-layer film an upper layer of which includes aluminum, and spreading a photo-resist, forming the photo-resist to a thickness less in an area connected to a second thin metal film than other area, patterning the first thin metal film, reducing a thickness of the photo-resist layer and removing the photo-resist in the area, removing the upper layer in the area to expose a lower layer, forming an interlayer insulating film and patterning it to expose the lower layer in the area, and patterning the second thin metal film to include the area, to connect the lower layer to the second thin metal film.
REFERENCES:
patent: 6087678 (2000-07-01), Kim
patent: 2006/0197085 (2006-09-01), Kang
Ishiga Nobuaki
Masutani Yuichi
Nagano Shingo
Yoshida Takuji
Buchanan & Ingersoll & Rooney PC
Hoang Quoc
Mitsubishi Denki & Kabushiki Kaisha
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