Semiconductor device manufacturing: process – Semiconductor substrate dicing
Reexamination Certificate
2011-08-16
2011-08-16
Ghyka, Alexander G (Department: 2812)
Semiconductor device manufacturing: process
Semiconductor substrate dicing
C438S738000, C257SE21483
Reexamination Certificate
active
07998837
ABSTRACT:
A method for fabricating a semiconductor device using optical proximity correction to form high integrated cell patterns that are less prone to bridge defects. The method includes: obtaining a target layout of cell patterns, which form rows in a cell region, and peripheral patterns of a peripheral region; forming oblique patterns, which are alternately overlapped in the rows of the cell patterns, and a reverse pattern of the peripheral patterns; attaching spacers to sidewalls of the oblique patterns and the reverse pattern; forming first burying patterns between the oblique patterns and a second burying pattern around the reverse pattern by filling gaps between the spacers; and forming the cell patterns by cutting and dividing the middle portions of the oblique patterns and the first burying patterns, and setting the peripheral pattern with the second burying pattern by removing the reverse pattern.
REFERENCES:
patent: 5698902 (1997-12-01), Uehara et al.
patent: 6221777 (2001-04-01), Singh et al.
patent: 7737001 (2010-06-01), Abe et al.
patent: 2005/0176197 (2005-08-01), Weis et al.
Ghyka Alexander G
Hynix / Semiconductor Inc.
Ladas & Parry LLP
Nikmanesh Seahvosh J
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