Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2008-05-20
2008-05-20
Wojciechowicz, Edward (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S508000, C257S659000, C257S700000, C257S773000
Reexamination Certificate
active
07375411
ABSTRACT:
A region of high metal density may be placed in metal layers proximate to an area of low metal density below an inductor on an integrated circuit without violating manufacturing design rules for reducing manufacturing defects and without substantially impacting performance of the inductor. These results are achieved by including a transitional region that includes conductive structures electrically isolated from each other between the region of high metal density and the region of low metal density. The transitional region has a structure that allows a negligible amount of current flow to be induced in the structure.
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Silicon Laboratories Inc.
Wojciechowicz Edward
Zagorin O'Brien Graham LLP
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