Apparatus and method for charge pump slew rate control

Details Apparatus and method for charge pump slew rate control Apparatus and method for charge pump slew rate control

2008-04-29

2008-04-29

Richards, N. Drew (Department: 2816)

Miscellaneous active electrical nonlinear devices, circuits, and

Signal converting, shaping, or generating

Slope control of leading or trailing edge of rectangular or...

C327S080000, C327S387000, C327S540000, C326S029000, C326S031000

Reexamination Certificate

active

07365585

ABSTRACT:
An apparatus and method for improving memory cell reliability is disclosed. The slew rate is reduced in an applied voltage signal used to program a memory cell when Fowler-Nordheim (FN) tunneling injection is detected. The applied programming signal is provided by a charge pump that is preferably a regulated charge pump. The charge pump is selectively controlled by a slew rate control circuit when FN tunneling injection is detected by a voltage level detection circuit at a predetermined threshold voltage level.

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